Surface modification of multi-wall carbon nanotubes by nitrogen attachment

被引:17
作者
Bertoti, Imre [1 ]
Mohai, Ilona [1 ]
Mohai, Miklos [1 ]
Szepvoelgyi, Janos [1 ,2 ]
机构
[1] Hungarian Acad Sci, Chem Res Ctr, Inst Mat & Environm Chem, Budapest, Hungary
[2] Univ Pannonia, Res Inst Chem & Proc Engn, Veszprem, Hungary
关键词
Carbon nanotube; Plasma modification; Covalent N attachment; XPS; N bonding states; PHOTOELECTRON-SPECTROSCOPY; BONDING STATES; PLASMA; XPS; LAYERS; FILMS; FUNCTIONALIZATION; BINDING; GROWTH;
D O I
10.1016/j.diamond.2011.05.011
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Commercial multiwall carbon nanotubes (MWCNT-s) were treated by RF activated N-2 gas plasma at (nominally) room temperature. Treatment time of 5 to 10 min was applied at negative bias varying in the 0-300 V range. Surface chemical alterations were followed by X-ray photoelectron spectroscopy (XPS). All the applied treatments resulted in a significant build-up of nitrogen in the surface of MWCNT-s. The amount of nitrogen varied between 19 and 25 at.% depending on the treatment time and, in a lesser extent, also on biasing conditions. Interestingly, the nitrogen attachment was also significant (20 at.%) when the treatment commenced without bias. Evaluating the high-resolution N1s XP spectral region, typically three different chemical bonding states of the nitrogen was delineated. Peak component at 398.3 +/- 0.3 eV is assigned to C=N-C type, at 399.7 +/- 0.3 eV to sp(2) N in melamine-type ring structure and at 400.9 +/- 0.3 eV to N substituting carbon in a graphite-like environment. Identical chemical bonding of the nitrogen was detected on the surface of highly oriented pyrolytic graphite (HOPG) and on microcrystalline graphite surfaces treated in the same way for comparison. Estimating the penetration depth of the nitrogen atoms by the SRIM program it was concluded that at the applied DC bias energy range the implanted nitrogen is incorporated in the top 2-4 monoatomic layers of the samples. A model for the distribution of the chemically bonded nitrogen on the outer walls of the MWCNT-s is proposed. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:965 / 968
页数:4
相关论文
共 37 条
[1]   Field emission of doped carbon nanotubes [J].
Ahn, HS ;
Lee, KR ;
Kim, DY ;
Han, SW .
APPLIED PHYSICS LETTERS, 2006, 88 (09)
[2]   Influence of the catalyst hydrogen pretreatment on the growth of vertically aligned nitrogen-doped carbon nanotubes [J].
Ayala, P. ;
Grueneis, A. ;
Gemming, T. ;
Buechner, B. ;
Ruemmeli, M. H. ;
Grimm, D. ;
Schumann, J. ;
Kaltofen, R. ;
Freire, F. L., Jr. ;
Fonseca Filho, H. D. ;
Pichler, T. .
CHEMISTRY OF MATERIALS, 2007, 19 (25) :6131-6137
[3]   The doping of carbon nanotubes with nitrogen and their potential applications [J].
Ayala, P. ;
Arenal, R. ;
Ruemmeli, M. ;
Rubio, A. ;
Pichler, T. .
CARBON, 2010, 48 (03) :575-586
[4]  
Baker MA, 1997, SURF INTERFACE ANAL, V25, P629, DOI 10.1002/(SICI)1096-9918(199708)25:9<629::AID-SIA313>3.0.CO
[5]  
2-5
[6]   Processing of carbon nanotube reinforced silicon nitride composites by spark plasma sintering [J].
Balázsi, C ;
Shen, Z ;
Kónya, Z ;
Kasztovszky, Z ;
Wéber, F ;
Vértesy, Z ;
Biró, LP ;
Kiricsi, I ;
Arató, P .
COMPOSITES SCIENCE AND TECHNOLOGY, 2005, 65 (05) :727-733
[7]   Characterization of nitride coatings by XPS [J].
Bertóti, I .
SURFACE & COATINGS TECHNOLOGY, 2002, 151 :194-203
[8]  
Bertóti I, 2000, SURF INTERFACE ANAL, V30, P538, DOI 10.1002/1096-9918(200008)30:1<538::AID-SIA797>3.0.CO
[9]  
2-J
[10]  
BHUSHAN B, 2007, HDB NANOTECHNOLOGY, P74