Recent Progress in AlGaN-Based Deep-UV LEDs

被引：133

作者：

Hirayama, Hideki ^{[1
]}

Fujikawa, Sachie ^{[1
]}

Kamata, Norihiko ^{[2
]}

机构：

[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama, Japan

[2] Saitama Univ, Grad Sch Sci & Engn, Mat Sci, Saitama, Japan

来源：

ELECTRONICS AND COMMUNICATIONS IN JAPAN | 2015年 / 98卷 / 05期

关键词：

AlGaN; AlN; crystal growth; deep-UV LED; internal quantum efficiency; MOCVD; LIGHT-EMITTING-DIODES; ULTRAVIOLET EMISSION; NM ALGAN;

D O I：

10.1002/ecj.11667

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Deep-ultraviolet (DUV) light-emitting diodes (LEDs) are in demand for a wide variety of potential applications, such as sterilization, water and air purification, medical uses, and so on. We have demonstrated 222-351 nm AlGaN and quaternary InAlGaN-based DUV-LEDs by developing a low threading dislocation density (TDD) AlN crystal. We achieved an external quantum efficiency (EQE) of about 4% and an output power greater than 30 mW in DUV-LEDs for use in sterilization applications by developing new crystal growth techniques.

引用

页码：1 / 8

页数：8

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