Molecular beam epitaxy growth of AlAs1-xBix

被引：7

作者：

Wang, Chang ^{[1
,2
,3
]}

Wang, Lijuan ^{[1
,3
]}

Wu, Xiaoyan ^{[4
,5
]}

Zhang, Yanchao ^{[1
,2
,3
]}

Liang, Hao ^{[1
,3
]}

Yue, Li ^{[1
]}

Zhang, Zhenpu ^{[1
,2
,3
]}

Ou, Xin ^{[6
]}

Wang, Shumin ^{[1
,2
,7
]}

机构：

[1] Chinese Acad Sci, Key Lab Terahertz Solid State Technol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[2] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100190, Peoples R China

[4] Shanghai Jiao Tong Univ, State Key Lab Adv Opt Commun Syst & Networks, Shanghai Key Lab Nav & Locat Based Serv, Shanghai 200240, Peoples R China

[5] Shanghai Jiao Tong Univ, Ctr Quantum Informat Sensing & Proc, Shanghai 200240, Peoples R China

[6] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[7] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2019年 / 34卷 / 03期

基金：

瑞典研究理事会;

关键词：

AlAsBi; molecular beam epitaxy; Rutherford backscattering spectroscopy; As-Al flux ratio; BAND-GAP; GAAS1-XBIX; BI;

D O I：

10.1088/1361-6641/aacf38

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High quality AlAs1-xBix layers with Bi composition of 3%-10.5% have been successfully grown by molecular beam epitaxy. The Bi incorporation is confirmed by Rutherford backscattering spectroscopy. For a 400 nm thick AlAsBi layer, the strain relaxation occurs when the Bi composition is larger than 6.5%. Flux ratio is calculated from Knudsen-cell model and Maxwell equation, according to the geometrical relationship of our equipment. The Bi incorporation increases with increasing the As-Al flux ratio as well as the Bi flux. The extrapolation lattice constant of hypothetic zincblende AlBi alloy is about 6.23 angstrom.

引用

页数：4

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