Orientation dependence of secondary recrystallisation in silicon-iron observations and analysis

被引：0
|
作者：
Hutchinson, B [1 ]
Homma, H [1 ]
机构：
[1] Swedish Inst Met Res, S-11428 Stockholm, Sweden
来源：
GRAIN GROWTH IN POLYCRYSTALLINE MATERIALS III | 1998年
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A strong dependence on matrix texture was demonstrated for Goss secondary recrystallisation in 3 % silicon iron. Preferential consumption of grains having relationships of type Sigma 9 to Goss orientation was determined by EBSP measurement and discussed based on the assumption of low energy CSL boundaries, which experience a reduced Zener pinning force from particles.
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页码：387 / 396
页数：10
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