Electroluminescent porous silicon p-n junction using polycrystalline silicon films

被引：5

作者：

ChaneCheLai, F ^{[1
]}

Beau, C ^{[1
]}

Briand, D ^{[1
]}

Joubert, P ^{[1
]}

机构：

[1] UNIV RENNES 1,IUT LANNION,GRP MICROELECTRON & VISUALISAT,F-22302 LANNION,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1996年 / 102卷

关键词：

D O I：

10.1016/0169-4332(96)00086-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electroluminescent devices have been achieved by anodization of a n(+)-type polycrystalline Si film deposited on p-type substrate. Al and Au-Pd pads were used to form the electrical contact on the porous n(+)-p junction. The current-voltage characteristics of the structures are significantly dependent on the type of metallic contact. Electroluminescence of the devices is also investigated.

引用

页码：399 / 403

页数：5

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