Spin-Torque Diode Measurements of MgO-Based Magnetic Tunnel Junctions with Asymmetric Electrodes

被引：22

作者：

Matsumoto, Rie ^{[1
]}

Chanthbouala, Andre ^{[1
]}

Grollier, Julie ^{[1
]}

Cros, Vincent ^{[1
]}

Fert, Albert ^{[1
]}

Nishimura, Kazumasa ^{[2
]}

Nagamine, Yoshinori ^{[2
]}

Maehara, Hiroki ^{[2
]}

Tsunekawa, Koji ^{[2
]}

Fukushima, Akio ^{[3
]}

Yuasa, Shinji ^{[3
]}

机构：

[1] UMR CNRS Thales, F-91767 Palaiseau, France

[2] Canon ANELVA Corp, Proc Dev Ctr, Kawasaki, Kanagawa 2158550, Japan

[3] Natl Inst Adv Ind Sci & Technol, Spintron Res Ctr, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 06期

基金：

欧洲研究理事会;

关键词：

VOLTAGE-DEPENDENCE; ROOM-TEMPERATURE; MAGNETORESISTANCE;

D O I：

10.1143/APEX.4.063001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a detailed study of the spin-torque diode effect in CoFeB/MgO/CoFe/NiFe magnetic tunnel junctions. From the evolution of the resonance frequency with magnetic field at different angles, we clearly identify the free-layer mode and find an excellent agreement with simulations by taking into account several terms for magnetic anisotropy. Moreover, we demonstrate the large contribution of the out-of-plane torque in our junctions with asymmetric electrodes compared to the in-plane torque. Consequently, we provide a way to enhance the sensitivity of these devices for the detection of microwave frequency. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

共 19 条

[11] Magnetic domain-wall racetrack memory [J].