Spin-Torque Diode Measurements of MgO-Based Magnetic Tunnel Junctions with Asymmetric Electrodes

被引：22
作者：
Matsumoto, Rie [1 ]
Chanthbouala, Andre [1 ]
Grollier, Julie [1 ]
Cros, Vincent [1 ]
Fert, Albert [1 ]
Nishimura, Kazumasa [2 ]
Nagamine, Yoshinori [2 ]
Maehara, Hiroki [2 ]
Tsunekawa, Koji [2 ]
Fukushima, Akio [3 ]
Yuasa, Shinji [3 ]
机构：
[1] UMR CNRS Thales, F-91767 Palaiseau, France
[2] Canon ANELVA Corp, Proc Dev Ctr, Kawasaki, Kanagawa 2158550, Japan
[3] Natl Inst Adv Ind Sci & Technol, Spintron Res Ctr, Tsukuba, Ibaraki 3058568, Japan
来源：
APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 06期
基金：
欧洲研究理事会;
关键词：
VOLTAGE-DEPENDENCE; ROOM-TEMPERATURE; MAGNETORESISTANCE;
D O I：
10.1143/APEX.4.063001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a detailed study of the spin-torque diode effect in CoFeB/MgO/CoFe/NiFe magnetic tunnel junctions. From the evolution of the resonance frequency with magnetic field at different angles, we clearly identify the free-layer mode and find an excellent agreement with simulations by taking into account several terms for magnetic anisotropy. Moreover, we demonstrate the large contribution of the out-of-plane torque in our junctions with asymmetric electrodes compared to the in-plane torque. Consequently, we provide a way to enhance the sensitivity of these devices for the detection of microwave frequency. (C) 2011 The Japan Society of Applied Physics
引用
收藏
页数：3
相关论文
共 19 条
  • [1] CHANTHBOUALA A, NAT PHYS IN PRESS
  • [2] Fukami S, 2009, 2009 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P230
  • [3] MAGNETIC ANISOTROPIES OF SPUTTERED FE FILMS ON MGO SUBSTRATES
    GORYUNOV, YV
    GARIFYANOV, NN
    KHALIULLIN, GG
    GARIFULLIN, IA
    TAGIROV, LR
    SCHREIBER, F
    MUHGE, T
    ZABEL, H
    [J]. PHYSICAL REVIEW B, 1995, 52 (18): : 13450 - 13458
  • [4] Quantized spin-wave modes in magnetic tunnel junction nanopillars
    Helmer, A.
    Cornelissen, S.
    Devolder, T.
    Kim, J. -V.
    van Roy, W.
    Lagae, L.
    Chappert, C.
    [J]. PHYSICAL REVIEW B, 2010, 81 (09):
  • [5] Hosomi M, 2005, INT EL DEVICES MEET, P473
  • [6] Large Diode Sensitivity of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
    Ishibashi, Shota
    Seki, Takeshi
    Nozaki, Takayuki
    Kubota, Hitoshi
    Yakata, Satoshi
    Fukushima, Akio
    Yuasa, Shinji
    Maehara, Hiroki
    Tsunekawa, Koji
    Djayaprawira, David D.
    Suzuki, Yoshishige
    [J]. APPLIED PHYSICS EXPRESS, 2010, 3 (07)
  • [7] Kittel C., 1996, Introduction to Solid State Physics, V7th edn, P505
  • [8] Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions
    Kubota, Hitoshi
    Fukushima, Akio
    Yakushiji, Kay
    Nagahama, Taro
    Yuasa, Shinji
    Ando, Koji
    Maehara, Hiroki
    Nagamine, Yoshinori
    Tsunekawa, Koji
    Djayaprawira, David D.
    Watanabe, Naoki
    Suzuki, Yoshishige
    [J]. NATURE PHYSICS, 2008, 4 (01) : 37 - 41
  • [9] Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions
    Oh, Se-Chung
    Park, Seung-Young
    Manchon, Aurelien
    Chshiev, Mairbek
    Han, Jae-Ho
    Lee, Hyun-Woo
    Lee, Jang-Eun
    Nam, Kyung-Tae
    Jo, Younghun
    Kong, Yo-Chan
    Dieny, Bernard
    Lee, Kyung-Jin
    [J]. NATURE PHYSICS, 2009, 5 (12) : 898 - 902
  • [10] Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
    Parkin, SSP
    Kaiser, C
    Panchula, A
    Rice, PM
    Hughes, B
    Samant, M
    Yang, SH
    [J]. NATURE MATERIALS, 2004, 3 (12) : 862 - 867
12