NON-DESTRUCTIVE MEASUREMENTS ON RECRYSTALLIZATION AND GRAIN-SIZE CHARACTERIZATION OF POLYCRYSTALLINE SILICON

被引：2

作者：

Kuo, Chil-Chyuan ^{[1
]}

机构：

[1] Ming Chi Univ Technol, Dept Mech Engn, New Taipei City 24301, Taiwan

来源：

JOURNAL OF RUSSIAN LASER RESEARCH | 2011年 / 32卷 / 02期

关键词：

optical measurements; grain size; polycrystalline silicon; melt duration; EXCIMER-LASER CRYSTALLIZATION; AMORPHOUS-SILICON; THIN-FILMS; LATERAL GROWTH;

D O I：

10.1007/s10946-011-9198-y

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Excimer-laser annealing is a widely used technique for producing polycrystalline silicon thin films. We develop an optical inspection system with simple optical arrangements for rapid measurement of recrystallization and grain-size characterization of poly-Si thin films. The recrystallization characterization of the sample after excimer-laser annealing can be easily manifested directly by the profile of peak-power density distribution. We investigate the relation between the maximum grain size of poly-Si thin films and transmission of the optical measurements and find that it coincides with those obtained by field-emission scanning electron microscopy.

引用

页码：130 / 138

页数：9

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