NON-DESTRUCTIVE MEASUREMENTS ON RECRYSTALLIZATION AND GRAIN-SIZE CHARACTERIZATION OF POLYCRYSTALLINE SILICON

Excimer-laser annealing is a widely used technique for producing polycrystalline silicon thin films. We develop an optical inspection system with simple optical arrangements for rapid measurement of recrystallization and grain-size characterization of poly-Si thin films. The recrystallization characterization of the sample after excimer-laser annealing can be easily manifested directly by the profile of peak-power density distribution. We investigate the relation between the maximum grain size of poly-Si thin films and transmission of the optical measurements and find that it coincides with those obtained by field-emission scanning electron microscopy.