共 21 条
Doped SnO2 Transparent Conductive Multilayer Thin Films Explored by Continuous Composition Spread
被引:24
作者:

Lee, Jin Ju
论文数: 0 引用数: 0
h-index: 0
机构:
Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea
Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea

Ha, Jong-Yoon
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea

Choi, Won-Kook
论文数: 0 引用数: 0
h-index: 0
机构:
Korea Inst Sci & Technol, Interface Control Res Ctr, Seoul 136791, South Korea Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea

Cho, Yong Soo
论文数: 0 引用数: 0
h-index: 0
机构:
Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea

论文数: 引用数:
h-index:
机构:
机构:
[1] Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea
[2] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[3] Univ Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA
[4] Korea Inst Sci & Technol, Interface Control Res Ctr, Seoul 136791, South Korea
[5] Korea Univ Sci & Technol, Dept Nanomat Sci & Technol, Taejon 305333, South Korea
关键词:
Mn-SnO2;
multilayer;
continuous composition spread;
transparent conducting oxide;
ROOM-TEMPERATURE;
ELECTRICAL-PROPERTIES;
OPTICAL-PROPERTIES;
ITO;
D O I:
10.1021/co500185d
中图分类号:
O69 [应用化学];
学科分类号:
081704 ;
摘要:
Mn-doped SnO2 thin films were fabricated by a continuous composition spread (CCS) method on a glass substrate at room temperature to find optimized compositions. The fabricated materials were found to have a lower resistivity than pure SnO2 thin films because of oxygen vacancies generated by Mn doping. As Mn content was increased, resistivity was found to decrease for limited doping concentrations. The minimum thin film resistivity was 0.29 Omega-cm for a composition of 2.59 wt % Mn-doped SnO2. The SnO vibrational stretching frequency in FT-IR showed a blue shift, consistent with oxygen deficiency. Mn-doped SnO2/Ag/Mn-doped SnO2 multilayer structures were fabricated using this optimized composition deposited by an on-axis radio frequency (RF) sputter. The multilayer transparent conducting oxide film had a resistivity of 7.35 x 10(-5) Omega-cm and an average transmittance above 86% in the 550 nm wavelength region.
引用
收藏
页码:247 / 252
页数:6
相关论文
共 21 条
- [1] Optical and electrical properties of transparent conductive ITO thin films deposited by sol-gel process[J]. THIN SOLID FILMS, 2000, 377 : 455 - 459Alam, MJ论文数: 0 引用数: 0 h-index: 0机构: Dublin City Univ, Sch Elect Engn, Dublin 9, Ireland Dublin City Univ, Sch Elect Engn, Dublin 9, IrelandCameron, DC论文数: 0 引用数: 0 h-index: 0机构: Dublin City Univ, Sch Elect Engn, Dublin 9, Ireland Dublin City Univ, Sch Elect Engn, Dublin 9, Ireland
- [2] Optical, structural and electrical properties of Mn doped tin oxide thin films[J]. BULLETIN OF MATERIALS SCIENCE, 2006, 29 (03) : 317 - 322论文数: 引用数: h-index:机构:Krishna, M. Ghanashyam论文数: 0 引用数: 0 h-index: 0机构: Univ Hyderabad, Sch Phys, Hyderabad 500046, Andhra Pradesh, IndiaBhatnagar, A. K.论文数: 0 引用数: 0 h-index: 0机构: Univ Hyderabad, Sch Phys, Hyderabad 500046, Andhra Pradesh, India
- [3] Bulk Sn1-xMnxO2 magnetic semiconductors without room-temperature ferromagnetism[J]. SOLID STATE COMMUNICATIONS, 2006, 138 (04) : 175 - 178Gao, K. H.论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ, Fac Sci, Inst Adv Mat Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R ChinaLi, Z. Q.论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ, Fac Sci, Inst Adv Mat Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China Tianjin Univ, Fac Sci, Inst Adv Mat Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R ChinaLiu, X. J.论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ, Fac Sci, Inst Adv Mat Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R ChinaSong, W.论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ, Fac Sci, Inst Adv Mat Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R ChinaLiu, H.论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ, Fac Sci, Inst Adv Mat Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R ChinaJiang, E. Y.论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ, Fac Sci, Inst Adv Mat Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China
- [4] Low temperature electrical transport properties of F-doped SnO2 films[J]. SOLID STATE COMMUNICATIONS, 2013, 157 : 49 - 53Gao, K. H.论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ, Dept Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200062, Peoples R China Tianjin Univ, Dept Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R ChinaLin, T.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China Tianjin Univ, Dept Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R ChinaLiu, X. D.论文数: 0 引用数: 0 h-index: 0机构: Tianjin Univ, Dept Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China Tianjin Univ, Dept Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R ChinaZhang, X. H.论文数: 0 引用数: 0 h-index: 0机构: Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin 300130, Peoples R China Tianjin Univ, Dept Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R ChinaLi, X. N.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China Tianjin Univ, Dept Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R ChinaWu, J.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China Tianjin Univ, Dept Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R ChinaLiu, Y. F.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China Tianjin Univ, Dept Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R ChinaWang, X. F.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China Tianjin Univ, Dept Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R ChinaChen, Y. W.论文数: 0 引用数: 0 h-index: 0机构: E China Normal Univ, Dept Phys, Shanghai 200062, Peoples R China Tianjin Univ, Dept Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R ChinaNi, B.论文数: 0 引用数: 0 h-index: 0机构: E China Normal Univ, Electron Microscope Ctr, Shanghai 200062, Peoples R China Tianjin Univ, Dept Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R ChinaDai, N.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China Tianjin Univ, Dept Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R ChinaChu, J. H.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China Tianjin Univ, Dept Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China
- [5] Influence of substrate temperature on the electrical and optical properties of Ga-doped ZnO thin films fabricated by continuous composition spread[J]. CERAMICS INTERNATIONAL, 2012, 38 : S605 - S608Jung, Keun论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South KoreaChoi, Won-Kook论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol, Optoelect Mat Ctr, Seoul 136791, South Korea Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South KoreaYoon, Seok-Jin论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South KoreaKim, Hyun Jae论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South KoreaChoi, Ji-Won论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea
- [6] Electrical and Optical Properties of Al-doped Zinc-oxide Thin Films Deposited at Room Temperature by Using the Continuous Composition Spread Method[J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 57 (04) : 1092 - 1095Jung, Keun论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South KoreaShin, Dong Wook论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South KoreaYoon, Seok-Jin论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South KoreaChoi, Ji-Won论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South KoreaChoi, Won-Kook论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol, Optoelect Mat Ctr, Seoul 136791, South Korea Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South KoreaSong, Jong-Han论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol, Nano Mat Anal Ctr, Seoul 136791, South Korea Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South KoreaKim, Hyun Jae论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 136791, South Korea
- [7] Improvement of a-Si solar cell properties by using SnO2:F TCO films coated with an ultra-thin TiO2 layer prepared by APCVD[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2006, 90 (18-19) : 3014 - 3020Kambe, M.论文数: 0 引用数: 0 h-index: 0机构: Asahi Glass Co Ltd, Res Ctr, Kanagawa Ku, Yokohama, Kanagawa 2218755, Japan Asahi Glass Co Ltd, Res Ctr, Kanagawa Ku, Yokohama, Kanagawa 2218755, JapanFukawa, M.论文数: 0 引用数: 0 h-index: 0机构: Asahi Glass Co Ltd, Res Ctr, Kanagawa Ku, Yokohama, Kanagawa 2218755, Japan Asahi Glass Co Ltd, Res Ctr, Kanagawa Ku, Yokohama, Kanagawa 2218755, JapanTaneda, N.论文数: 0 引用数: 0 h-index: 0机构: Asahi Glass Co Ltd, Res Ctr, Kanagawa Ku, Yokohama, Kanagawa 2218755, Japan Asahi Glass Co Ltd, Res Ctr, Kanagawa Ku, Yokohama, Kanagawa 2218755, JapanSato, K.论文数: 0 引用数: 0 h-index: 0机构: Asahi Glass Co Ltd, Res Ctr, Kanagawa Ku, Yokohama, Kanagawa 2218755, Japan Asahi Glass Co Ltd, Res Ctr, Kanagawa Ku, Yokohama, Kanagawa 2218755, Japan
- [8] Rutile-type oxide-diluted magnetic semiconductor:: Mn-doped SnO2[J]. APPLIED PHYSICS LETTERS, 2002, 80 (01) : 94 - 96论文数: 引用数: h-index:机构:Fukumura, T论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Innovat & Engineered Mat, Yokohama, Kanagawa 2268502, JapanKawasaki, M论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Innovat & Engineered Mat, Yokohama, Kanagawa 2268502, JapanInaba, K论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Innovat & Engineered Mat, Yokohama, Kanagawa 2268502, JapanHasegawa, T论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Innovat & Engineered Mat, Yokohama, Kanagawa 2268502, JapanKoinuma, H论文数: 0 引用数: 0 h-index: 0机构: Tokyo Inst Technol, Dept Innovat & Engineered Mat, Yokohama, Kanagawa 2268502, Japan
- [9] Nano-sized indium-free MTO/Ag/MTO transparent conducting electrode prepared by RF sputtering at room temperature for organic photovoltaic cells[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2015, 132 : 80 - 85Lee, Chung-Hyeon论文数: 0 引用数: 0 h-index: 0机构: KIST, Future Convergence Res Div, Seoul 136791, South Korea Hanyang Univ, Dept Mat Sci & Engn, Seoul 133791, South Korea KIST, Future Convergence Res Div, Seoul 136791, South KoreaPandey, Rina论文数: 0 引用数: 0 h-index: 0机构: KIST, Future Convergence Res Div, Seoul 136791, South Korea KUST, Dept Nano Mat Sci & Engn, Taejon 305350, South Korea KIST, Future Convergence Res Div, Seoul 136791, South KoreaWang, Byung-Yong论文数: 0 引用数: 0 h-index: 0机构: KIST, Future Convergence Res Div, Seoul 136791, South Korea Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea KIST, Future Convergence Res Div, Seoul 136791, South KoreaChoi, Won-Kook论文数: 0 引用数: 0 h-index: 0机构: KIST, Future Convergence Res Div, Seoul 136791, South Korea KUST, Dept Nano Mat Sci & Engn, Taejon 305350, South Korea KIST, Future Convergence Res Div, Seoul 136791, South KoreaChoi, Duck-Kyun论文数: 0 引用数: 0 h-index: 0机构: Hanyang Univ, Dept Mat Sci & Engn, Seoul 133791, South Korea KIST, Future Convergence Res Div, Seoul 136791, South KoreaOh, Young-Jei论文数: 0 引用数: 0 h-index: 0机构: KIST, Future Convergence Res Div, Seoul 136791, South Korea KUST, Dept Nano Mat Sci & Engn, Taejon 305350, South Korea KIST, Future Convergence Res Div, Seoul 136791, South Korea
- [10] Structure and Room-Temperature Ferromagnetism of Zn-Doped SnO2 Nanorods Prepared by Solvothermal Method[J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (11) : 4790 - 4796Liu, Xiaofang论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R ChinaIqbal, Javed论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R ChinaWu, Zhangben论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R ChinaHe, Bo论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R ChinaYu, Ronghai论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China