Impact of aging on the soft error rate of 6T SRAM for planar and bulk technologies

被引：2
作者：
Rousselin, T. [1 ]
Hubert, G. [2 ]
Regis, D. [1 ]
Gatti, M. [1 ]
Bensoussan, A. [3 ]
机构：
[1] Thales Avion, Merignac, France
[2] French Aerosp Lab ONERA, Toulouse, France
[3] IRT St Exupery, Toulouse, France
来源：
MICROELECTRONICS RELIABILITY | 2017年 / 76卷
关键词：
Aging; NBTI; 6T SRAM; SEE; Modelling; Soft error rate; BIAS TEMPERATURE INSTABILITY;
D O I：
10.1016/j.microrel.2017.07.078
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper evaluates the impact of aging on the radiation sensitivity of 6T SRAM for two planar bulk technologies. This study is motivated by the growing impact of aging and radiation effects on the reliability of CMOS technology. A modelling methodology dedicated to this new phenomenon is proposed. This modelling uses the radiation modelling device MUSCA SEP3 and an electrical aging modelling. First, the impact of aging on SEE sensitivity is studied through a parametric modeling of the threshold voltages of the transistors composing the 6T SRAM. Then, an operative avionics environment is modelled in order to evaluate the consequences on reliability. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：159 / 163
页数：5
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