One-Step Ge/Si Epitaxial Growth

被引：3

作者：

Wu, Hung-Chi ^{[2
]}

Lin, Bi-Hsuan ^{[3
]}

Chen, Huang-Chin ^{[1
,4
]}

Chen, Po-Chin ^{[2
]}

Sheu, Hwo-Shuenn ^{[3
]}

Lin, I-Nan ^{[4
]}

Chiu, Hsin-Tien ^{[5
]}

Lee, Chi-Young ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Ctr Nanotechnol Mat Sci & Microsyst, Hsinchu 30013, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

[3] Natl Synchrotron Radiat Res Ctr, Div Res, Hsinchu 30076, Taiwan

[4] Tamkang Univ, Dept Phys, Tamsui 25137, Taiwan

[5] Natl Chiao Tung Univ, Dept Appl Chem, Hsinchu 30010, Taiwan

来源：

ACS APPLIED MATERIALS & INTERFACES | 2011年 / 3卷 / 07期

关键词：

germanium (Ge); silicon (Si); epitaxial growth; chemical vapor deposition (CVD); one-step growth; MOLECULAR-BEAM EPITAXY; GERMANIUM FILMS; GE FILMS; SILICON; SI; DEPOSITION; HETEROSTRUCTURES; TRANSISTORS; GAAS;

D O I：

10.1021/am200310c

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a GexSi1-x (0 < x < 1) graded buffer layer was demonstrated through a facile chemical vapor deposition method in one step by decomposing a hazardousless GeO2 powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

引用

页码：2398 / 2401

页数：4

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