Temperature distribution study of Al-free diode lasers by photothermal techniques

被引:7
作者
Bertolotti, M [1 ]
Li Voti, R [1 ]
Paoloni, S [1 ]
Sibilia, C [1 ]
机构
[1] Univ Rome La Sapienza, INFM, Dipartimento Energet, I-00161 Rome, Italy
来源
PHOTOACOUSTIC AND PHOTOTHERMAL PHENOMENA: TENTH INTERNATIONAL CONFERENCE | 1999年 / 463卷
关键词
D O I
10.1063/1.58125
中图分类号
R318 [生物医学工程];
学科分类号
0831 ;
摘要
There is an increasing interest in Al-free 980 nm lasers, (1-3) due to advantages over InGaAs/AlGaAs lasers: significantly lower electrical and thermal resistance(2,3) and their potential for improved reliability. The Wallplug efficiency of such a lasers is the highest reported up to now (4). In order to improve the reliability of such lasers at output powers near the catastrophic optical damage (COD) limit it is increasingly important to identify and analyse the causes of degradation mechanisms during laser operation. Special attentions is addressed to localizing and identifying the heat sources near the laser diode facets. The structure of the investigated laser diodes is described in (4), the main difference from the traditional laser diodes is that here was applied the large-optical-cavity concept (5), according to which the waveguide consists of a relatively wide (0.6 mu m) layer of InGaAsP with a strained double quantum well in the center. The cladding layers are InGaP lattice matched to GaAs. In such a laser structure it is possible to obtain an internal optical loss coefficient as low as 2 cm(-1). The mirror temperature (T-m) estimation is therefore extremely important in order to predict the degradation rate of these high performance lasers.
引用
收藏
页码:515 / 517
页数:3
相关论文
共 8 条
[1]   ALUMINUM-FREE 980-NM GAINAS/GAINASP/GAINP PUMP LASERS [J].
ASONEN, H ;
OVTCHINNIKOV, A ;
ZHANG, GD ;
NAPPI, J ;
SAVOLAINEN, P ;
PESSA, M .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) :415-423
[2]   MIRROR TEMPERATURE OF A SEMICONDUCTOR DIODE-LASER STUDIED WITH A PHOTOTHERMAL DEFLECTION METHOD [J].
BERTOLOTTI, M ;
LIAKHOU, G ;
LIVOTI, R ;
WANG, RP ;
SIBILIA, C ;
YAKOVLEV, VP .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (12) :7054-7060
[3]   NEW METHOD FOR THE STUDY OF MIRROR HEATING OF A SEMICONDUCTOR-LASER DIODE AND FOR THE DETERMINATION OF THERMAL-DIFFUSIVITY OF THE ENTIRE STRUCTURE [J].
BERTOLOTTI, M ;
LIAKHOU, GL ;
VOTI, RL ;
SIBILIA, C ;
SYRBU, A ;
WANG, RP .
APPLIED PHYSICS LETTERS, 1994, 65 (18) :2266-2268
[4]   66% CW wallplug efficiency from Al-free 0.98 mu m-emitting diode lasers [J].
Botez, D ;
Mawst, LJ ;
Bhattacharya, A ;
Lopez, J ;
Li, J ;
Kuech, TF ;
Iakovlev, VP ;
Suruceanu, GI ;
Caliman, A ;
Syrbu, AV .
ELECTRONICS LETTERS, 1996, 32 (21) :2012-2013
[5]   6W CW front-facet power from short-cavity (0.5 mm), 100μm stripe Al-free 0.98μm-emitting diode lasers [J].
Botez, D ;
Mawst, LJ ;
Bhattacharya, A ;
Lopez, J ;
Li, J ;
Kuech, TF ;
Iakovlev, VP ;
Suruceanu, GI ;
Caliman, A ;
Syrbu, AV ;
Morris, J .
ELECTRONICS LETTERS, 1997, 33 (24) :2037-2039
[6]   HIGH CONTINUOUS-WAVE OUTPUT POWER INGAAS/INGAASP/INGAP DIODE-LASERS - EFFECT OF SUBSTRATE MISORIENTATION [J].
MAWST, LJ ;
BHATTACHARYA, A ;
NESNIDAL, M ;
LOPEZ, J ;
BOTEZ, D ;
MORRIS, JA ;
ZORY, P .
APPLIED PHYSICS LETTERS, 1995, 67 (20) :2901-2903
[7]  
PETRESCUPRAHOVA IB, 1994, IEICE T ELECTRON, VE77C, P1472
[8]   ZnSe-facet-passivated InGaAs/InGaAsP/InGaP diode lasers of high CW power and 'wallplug' efficiency [J].
Syrbu, AV ;
Yakovlev, VP ;
Suruceanu, GI ;
Mereutza, AZ ;
Mawst, LJ ;
Bhattacharya, A ;
Nesnidal, M ;
Lopez, J ;
Botez, D .
ELECTRONICS LETTERS, 1996, 32 (04) :352-354