High spatial frequency periodic structures formation on silicon using near UV femtosecond laser irradiation

被引：12

作者：

Cahyadi, Rico S. ^{[1
]}

Torralva, Ben ^{[2
]}

Yalisove, Steven M. ^{[1
]}

机构：

[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Dept Atmospher Ocean & Space Sci, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2018年 / 112卷 / 03期

关键词：

CRYSTALLINE SILICON; SURFACE-STRUCTURE; PULSES; NANOSTRUCTURES; AMORPHIZATION; EXCITATION; ABLATION; GROWTH; GAAS; HF;

D O I：

10.1063/1.5009776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Observation of a nanoscale island-like periodic surface structure in silicon using 390 nm ultrafast laser irradiation in vacuum is reported. A strong correlation is observed between the island structure and the formation of a high-spatial frequency laser induced periodic surface structure below the single pulse melt threshold. Further hexagonal and quasi-hexagonal arrangements of the islands concurrent with bifurcation suggest the existence of a strain ordering mechanism. Island bifurcation suggests a high stress state induced by point-defect generation during and after femtosecond laser induced band-gap closure. Published by AIP Publishing.

引用

页数：5

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