Extraction of Propagation Delay-Correlated Mobility and Its Verification for Amorphous InGaZnO Thin-Film Transistor-Based Inverters

被引：5

作者：

Lee, Kyung Min ^{[1
]}

Jang, Jaeman ^{[1
]}

Choi, Sung-Jin ^{[1
]}

Kim, Dong Myong ^{[1
]}

Kim, Kyung Rok ^{[2
]}

Kim, Dae Hwan ^{[1
]}

机构：

[1] Kookmin Univ, Sch Elect Engn, Seoul 136702, South Korea

[2] Ulsan Natl Inst Sci & Technol, Sch Elect & Comp Engn, Ulsan 689798, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

Amorphous indium-gallium-zinc oxide (a-IGZO); mobility; propagation delay; subgap density-of-states (DOSs); thin-film transistors (TFTs); SILICON;

D O I：

10.1109/TED.2015.2413941

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We found that field-effect mobility, which had been widely used in the evaluation of the mobility of an amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) failed to describe the effect of mobility on propagation delay (tPD) in an a-IGZO TFT-based circuit, and also proposed an extraction technique for the t(PD)-correlated mobility (mu t(PD)) considering both the subgap density-of-states and the voltage-dependent charge density. It is verified that the proposed mu t(PD) is the best correlated with the measured t(PD) in IGZO TFT-based inverters other than various mobilities in the literature. Our results have revealed that it is possible to predict t(PD) only with the measured current-voltage characteristic of the a-IGZO TFT without measuring t(PD) in IGZO-based circuits.

引用

页码：1504 / 1510

页数：7

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