Extraction of Propagation Delay-Correlated Mobility and Its Verification for Amorphous InGaZnO Thin-Film Transistor-Based Inverters

被引：5
作者：
Lee, Kyung Min [1 ]
Jang, Jaeman [1 ]
Choi, Sung-Jin [1 ]
Kim, Dong Myong [1 ]
Kim, Kyung Rok [2 ]
Kim, Dae Hwan [1 ]
机构：
[1] Kookmin Univ, Sch Elect Engn, Seoul 136702, South Korea
[2] Ulsan Natl Inst Sci & Technol, Sch Elect & Comp Engn, Ulsan 689798, South Korea
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 05期
基金：
新加坡国家研究基金会;
关键词：
Amorphous indium-gallium-zinc oxide (a-IGZO); mobility; propagation delay; subgap density-of-states (DOSs); thin-film transistors (TFTs); SILICON;
D O I：
10.1109/TED.2015.2413941
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We found that field-effect mobility, which had been widely used in the evaluation of the mobility of an amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) failed to describe the effect of mobility on propagation delay (tPD) in an a-IGZO TFT-based circuit, and also proposed an extraction technique for the t(PD)-correlated mobility (mu t(PD)) considering both the subgap density-of-states and the voltage-dependent charge density. It is verified that the proposed mu t(PD) is the best correlated with the measured t(PD) in IGZO TFT-based inverters other than various mobilities in the literature. Our results have revealed that it is possible to predict t(PD) only with the measured current-voltage characteristic of the a-IGZO TFT without measuring t(PD) in IGZO-based circuits.
引用
收藏
页码：1504 / 1510
页数：7
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