Room temperature continuous-wave operated 2.0-W GaN-based ultraviolet laser diodes

被引：8

作者：

Yang, Jing ^{[1
,2
]}

Zhao, De-Gang ^{[1
,2
]}

Liu, Zong-Shun ^{[1
]}

Wang, Baibin ^{[1
]}

Zhang, Yu-Heng ^{[1
]}

Zhang, Zhen-Zhuo ^{[1
]}

Chen, Ping ^{[1
]}

Liang, Feng ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China

来源：

OPTICS LETTERS | 2022年 / 47卷 / 07期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1364/OL.454340

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Temperature characteristics of near-UV laser diodes (LDs) with a lasing wavelength of 384nm are investigated. The characteristic temperature of threshold current (T-0) of the UV LDs is low. Thus, the performance of the UV LDs under continuous wave (CW) operation is not as good as under pulsed operation especially at a high injection current. In addition, it is found that self-heating is a key factor for CW characteristics of the UV LDs, where suppression of the self-heating by using thick waveguide layers can increase the critical current of thermal rollover of the UVLD's operation. A high CW output power of 2.0 W is achieved for an InGaN near-UV LD with the n-side down on a sub-mount, whose threshold current density is 1.27 kA/cm(2) and the highest wall plug efficiency (WPE) is approximately 15.9% at an injection current of 1.2 A. (C) 2022 Optica Publishing Group

引用

页码：1666 / 1668

页数：3

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