Micromachined coplanar transmission lines in a GaAs technology

被引：0

作者：

Dupuis, O ^{[1
]}

Carbonell, J ^{[1
]}

Mounaix, P ^{[1
]}

Vanbésien, O ^{[1
]}

Lippens, D ^{[1
]}

机构：

[1] Univ Sci & Tech Lille Flandres Artois, Inst Elect & Microelect Nord, CNRS, UMR 9929, F-59652 Villeneuve Dascq, France

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1999年 / 20卷 / 02期

关键词：

micromachining; coplanar transmission lines; GaAs technology; millimeter waves;

D O I：

10.1002/(SICI)1098-2760(19990120)20:2<106::AID-MOP7>3.0.CO;2-U

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-speed low-loss micromachined coplanar transmission lines deposited on a polyimide film were fabricated in a GaAs technology. On-wafer measurements of scattering parameters rep to 110 GHz show an effective permittivity ns low ns 1.08. Special attention was also paid to the tapering section between the probing and substrateless regions, taking advantage of the etching profile. (C) 1999 John Wiley & Sons, Inc.

引用

页码：106 / 110

页数：5

共 11 条

[1]

BIANCO B, 1976, ALTA FREQ, V2, P109

[2] TERAHERTZ ATTENUATION AND DISPERSION CHARACTERISTICS OF COPLANAR TRANSMISSION-LINES [J].