Atomistic mechanisms of moisture-induced fracture at copper-silica interfaces

被引:9
作者
Vijayashankar, Dandapani [1 ]
Zhu, Hong [2 ]
Garg, Saurabh [1 ]
Teki, Ranganath [1 ]
Ramprasad, R. [2 ]
Lane, Michael W. [3 ]
Ramanath, Ganpati [1 ]
机构
[1] Rensselaer Polytech Inst, Mat Sci & Engn Dept, Troy, NY 12180 USA
[2] Univ Connecticut, Chem Mat & Biomol Engn Dept, Storrs, CT 06269 USA
[3] Emory & Henry Coll, Dept Chem, Emory, VA 24327 USA
基金
美国国家科学基金会;
关键词
adhesion; ceramics; copper; delamination; density functional theory; dielectric materials; electron spectra; fracture toughness; fracture toughness testing; silicon compounds; SUBCRITICAL CRACK-GROWTH; AUGMENTED-WAVE METHOD; MOLECULES; ADHESION; BEHAVIOR; SOLIDS; FILMS; GLASS;
D O I
10.1063/1.3622304
中图分类号
O59 [应用物理学];
学科分类号
摘要
Tailoring the chemo-mechanical properties of metal-dielectric interfaces is crucial for many applications including nanodevice wiring, packaging, composites, and catalysis. Here, we combine moisture-induced fracture tests, electron spectroscopy, and density functional theory calculations to reveal fracture toughness partitioning and atomistic delamination mechanisms at copper-silica interfaces. Copper plasticity is supported above a threshold work of adhesion and delamination occurs by moisture-induced Cu-O bond scission in Cu-O-Si bridges. These results provide insights into the effects of the nature of metal-oxygen bonding on moisture-induced delamination of metal-dielectric interfaces. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3622304]
引用
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页数:3
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