A high-power and high-efficiency monolithic power amplifier at 28 GHz for LMDS applications

被引：32
作者：
Siddiqui, MK [1 ]
Sharma, AK [1 ]
Callejo, LG [1 ]
Lai, R [1 ]
机构：
[1] TRW Space & Elect Grp, Elect Technol Div, Redondo Beach, CA 90278 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1998年 / 46卷 / 12期
关键词：
millimeter-wave transmitters; MMIC power amplifiers; MMIC transmitters;
D O I：
10.1109/22.739201
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-power and high-efficiency monolithic power amplifier operating from 27.5 to 29.5 GHz is presented for local multipoint distribution service. Using 0.15-mu m InGaAs/AlGaAs/GaAs pseudomorphic high electron-mobility transistor devices, the two-stage power amplifier on 4-mil GaAs substrate demonstrated greater than 16-dB small-signal gain, 32-dBm (1.6 W) power with 35% power-added efficiency, The amplifier attained peak output power of 33.9 dBm (2.4 W) and peak power-added efficiency of 37%. At the peak power level, the amplifier exhibited power densities in excess of 640 mW/mm, which is the highest output power density attained by Ka-band monolithic power amplifiers, At lower drain voltage, the amplifier attained 43% power-added efficiency with 30-dBm output power.
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页码：2226 / 2232
页数：7
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