Effects of growth interruption and FIB implantation in the UHV total vacuum process for the buried mesoscopic structures

In order to realize buried mesoscopic structures using a total vacuum system which consists of low-energy focused ion beam and molecular beam epitaxy systems, the effect of growth interruption and FIB implantation at the GaAs layer is studied experimentally. It is found that the amount of depletion caused by the growth interruption depends on the Si concentration. In order to discuss this dependence, self-consistent calculations were performed, It is found by calculation that the amount of depletion depends on Si concentration if the shallow interface state at the growth interrupted interface is assumed.