On-Wafer Measurement Errors Due to Unwanted Radiations on High-Q Inductors

被引:6
作者
Bushueva, Olga [1 ,2 ]
Viallon, Christophe [1 ,2 ]
Ghannam, Ayad [3 ]
Parra, Thierry [1 ,2 ]
机构
[1] CNRS, LAAS, F-31031 Toulouse, France
[2] Univ Toulouse, UPS, LAAS, F-31031 Toulouse, France
[3] 3DiS Technol, F-31676 Labege, France
关键词
High-Q inductor; high-resistivity substrate; on-wafer measurements; quality factor; radiation; RF probe;
D O I
10.1109/TMTT.2016.2588486
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper investigates the disagreements that may occur between on-wafer measurements and electromagnetic (EM) simulations of high-Q inductive devices. Such disagreements are highlighted on a planar spiral inductor and a 3-D solenoid which exhibit measured maximum Q-factors of 27 and 35, respectively, while 42 and 45 were expected from EM simulations. Both devices are fabricated on high-resistivity substrates. A radiative interaction is identified between RF probe and inductive device under test. By using EM simulations, extra-losses associated with this parasitic effect are fully modeled through the calculation of radiation and dissipation related Q-factors. Adjustments of on-wafer probe setup are proposed to reduce this parasitic effect. Finally, the 3-D solenoid inductor is characterized using a new experimental fixture, and the maximum Q of 45 predicted by EM simulation is retrieved.
引用
收藏
页码:2905 / 2911
页数:7
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