Self-aligned Organic Thin-Film Transistors for Flexible Electronics

The digitalization is one of the main driving force for technologic developments in the area of low-cost electronics. Sensors and RFID tags should be integrated possibly at low-cost to easily upgrade everyday objects with new functionalities. Key elements of such upgrading objects are often thin-film transistors (TFTs). In this article we analysed two different commercially available, high-k nanocomposites ind (R) flex Z3 and ind (R) flex T3 regarding their frequency-dependent dielectric constant and surface properties. TFTs using either ind (R) flex Z3 or ino (R) flex T3 as gate dielectric were fabricated using common photolithographic integration methods and subsequently electrically analysed. For further device optimization a self-aligning integration technique was used utilising the nanocomposite ind (R) flex T3 as gate dielectric. For all integrated TFTs, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) was used as active semiconductor.