Protected hole valley states in single-layer MoS2

被引：11
作者：
Bussolotti, Fabio [1 ]
Kawai, Hiroyo [1 ,3 ]
Wong, Swee Liang [1 ]
Goh, Kuan Eng Johnson [1 ,2 ]
机构：
[1] ASTAR, Inst Mat Res & Engn, 08-03,2 Fusionopolis Way, Singapore 138634, Singapore
[2] Natl Univ Singapore, Deparunent Phys, 2 Sci Dr 3, Singapore 117542, Singapore
[3] Inst High Performance Comp, 16-16 Connexis,1 Fusionopolis Way, Singapore 138632, Singapore
来源：
PHYSICAL REVIEW B | 2019年 / 99卷 / 04期
关键词：
ANGLE-RESOLVED PHOTOEMISSION; ELECTRONIC-PROPERTIES; ALIGNMENT; ENERGY;
D O I：
10.1103/PhysRevB.99.045134
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present an angle-resolved photoemission spectroscopy study of single-layer MoS2 where interaction with a supporting highly ordered pyrolytic graphite substrate was controlled by temperature change, consistent with related modifications in the layer-substrate distance. The impact of interface potential landscape changes on the electronic properties and charge dynamics on the MoS2 layer was evaluated by valence-band dispersion and photoemission line-shape analysis. Our results indicate that the hole states at the K-valley point are essentially unaffected by interface potential, reflecting the strong-in plane localization of the electronic wave function.
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页数：11
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