Low-energy intense pulsed light annealing of InZnO sol-gel films via employment of a resonant absorber

被引：1
作者：
Cho, Minwoo [1 ]
Song, Kyeong-Youn [2 ]
Cho, Kwan Hyun [3 ]
Lee, Hoo-Jeong [1 ,2 ,4 ]
机构：
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea
[2] Sungkyunkwan Univ, SKKU Adv Inst Nano Technol, Suwon 16419, South Korea
[3] Korea Inst Ind Technol KITECH, Manufactu Ring Proc Platform R&D Dept, Ansan 426910, Gyeonggi Do, South Korea
[4] Sungkyunkwan Univ, Dept Smart Fab Technol, Suwon 16419, South Korea
来源：
APPLIED PHYSICS LETTERS | 2021年 / 119卷 / 13期
基金：
新加坡国家研究基金会;
关键词：
OXIDE THIN-FILM; PHOTOCHEMICAL ACTIVATION; TRANSISTORS; PERFORMANCE; TEMPERATURE; SEMICONDUCTORS;
D O I：
10.1063/5.0060061
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A resonant absorber enables low-temperature sintering of InZnO sol-gel films with low-energy-density intense pulse light (IPL) irradiation (1J/pulse). A back-gate structure, incorporated with a resonant absorber, exhibits effective light absorption. A device fabricated based on such a gate structure and sintered with irradiation of 50 pulses (similar to 50J/cm(2)) demonstrates good electrical properties with a mobility of 0.34cm(2)/Vs and an on-off ratio of 10(6) and a substrate temperature under 210 degrees C, showcasing that employing a resonant absorber could enable low-temperature sintering of sol-gel films with low-energy-density irradiation. Further x-ray photoelectron spectroscopy analysis of the oxygen and nitrogen peaks indicates that IPL irradiation facilitated sol-gel reactions in films. Published under an exclusive license by AIP Publishing.
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页数：6
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