Organic Programmable Resistance Memory Device Based on Au/Alq3/gold-nanoparticle/Alq3/Al Structure

被引：9

作者：

Liu, Xin ^{[1
,2
]}

Ji, Zhuoyu ^{[1
]}

Shang, Liwei ^{[1
]}

Wang, Hong ^{[1
]}

Chen, Yingping ^{[1
]}

Han, Maixing ^{[1
]}

Lu, Congyan ^{[1
]}

Liu, Ming ^{[1
]}

Chen, Junning ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

[2] Anhui Univ, Coll Elect & Technol, Hefei 230039, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 08期

基金：

美国国家科学基金会;

关键词：

Nonvolatile memory; organic memory device; tris(8-hydroxyquinolinato)aluminum (Alq(3)); BISTABLE MEMORY; BISTABILITY; TRANSISTORS; MECHANISM; CIRCUITS; FILMS;

D O I：

10.1109/LED.2011.2158055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, an organic memory cell based on tris(8-hydroxyquinolinato) aluminum doped with gold nanoparticles is reported. The device can achieve good resistive switching properties, such as a high on/off current ratio of about 104, and good retention (4 h at 0.1 V). The device remains in either state even after the power has been turned off and shows a good stability under stress test. The current-voltage characteristics are comprehensively investigated, and a possible mechanism is proposed and well fitted with the experiment data. The results show that the organic memory devices have promising potentials for future flexible electronic systems.

引用

页码：1140 / 1142

页数：3

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