Theoretical prediction of local distortion in an ErO6 cluster:: Stabilization of a C4v structure by a rack and pinion effect

被引:23
作者
Ishii, M
Komukai, Y
机构
[1] JASRI, Mikaduki, Hyogo 6795198, Japan
[2] Keio Univ, Fac Sci & Technol, Kouhoku Ku, Yokohama, Kanagawa 2238522, Japan
关键词
D O I
10.1063/1.1392305
中图分类号
O59 [应用物理学];
学科分类号
摘要
As a possible atomic coordination of erbium dopants surrounded by oxygen, a molecular orbital calculation of an ErO6 cluster can predict a C-4v pseudo-octahedral structure with Er distortion of similar to0.1 Angstrom from the octahedral center. It was found that bond alternation by a "rack and pinion effect" can minimize the electron transfer from O2- to Er3+ at this distortion range, resulting in stable ionic bonding; the rotation of an O 2p orbital due to Er 5d translation, similar to rack and pinion motion, forms a new O 2p-Er 5d bond, while a dipole moment induced by symmetrical degradation makes an O 2p-Er 6s bond unstable. (C) 2001 American Institute of Physics.
引用
收藏
页码:934 / 936
页数:3
相关论文
共 18 条
  • [1] DISCRETE VARIATIONAL X-ALPHA CLUSTER CALCULATIONS .1. APPLICATION TO METAL CLUSTERS
    ADACHI, H
    TSUKADA, M
    SATOKO, C
    [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1978, 45 (03) : 875 - 883
  • [2] LOCAL-STRUCTURE OF 1.54-MU-M-LUMINESCENCE ER-3+ IMPLANTED IN SI
    ADLER, DL
    JACOBSON, DC
    EAGLESHAM, DJ
    MARCUS, MA
    BENTON, JL
    POATE, JM
    CITRIN, PH
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (18) : 2181 - 2183
  • [3] Electron paramagnetic resonance and photoluminescence study of Er-impurity complexes in Si
    Carey, JD
    Barklie, RC
    Donegan, JF
    Priolo, F
    Franzò, G
    Coffa, S
    [J]. PHYSICAL REVIEW B, 1999, 59 (04): : 2773 - 2782
  • [4] TEMPERATURE-DEPENDENCE AND QUENCHING PROCESSES OF THE INTRA-4F LUMINESCENCE OF ER IN CRYSTALLINE SI
    COFFA, S
    FRANZO, G
    PRIOLO, F
    POLMAN, A
    SERNA, R
    [J]. PHYSICAL REVIEW B, 1994, 49 (23): : 16313 - 16320
  • [5] PHOTOLUMINESCENCE EXCITATION MEASUREMENTS ON GAAS-ER GROWN BY MOLECULAR-BEAM EPITAXY
    ENNEN, H
    WAGNER, J
    MULLER, HD
    SMITH, RS
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (10) : 4877 - 4879
  • [6] XANES analysis of optical activation process of Er in Si:Er2O3 thin film:: Electronic and structural modifications around Er
    Ishii, M
    Komuro, S
    Morikawa, T
    Aoyagi, Y
    Ishikawa, T
    Ueki, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 : 191 - 194
  • [7] Site-selective x-ray absorption fine structure analysis of an optically active center in Er-doped semiconductor thin film using x-ray-excited optical luminescence
    Ishii, M
    Tanaka, Y
    Ishikawa, T
    Komuro, S
    Morikawa, T
    Aoyagi, Y
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (02) : 183 - 185
  • [8] The optically active center and its activation process in Er-doped Si thin film produced by laser ablation
    Ishii, M
    Ishikawa, T
    Ueki, T
    Komuro, S
    Morikawa, T
    Aoyagi, Y
    Oyanagi, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) : 4024 - 4031
  • [9] Highly erbium-doped zinc-oxide thin film prepared by laser ablation and its 1.54 μm emission dynamics
    Komuro, S
    Katsumata, T
    Morikawa, T
    Zhao, XW
    Isshiki, H
    Aoyagi, Y
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 88 (12) : 7129 - 7136
  • [10] Local environment of erbium atoms in amorphous hydrogenated silicon
    Masterov, VF
    Nasredinov, FS
    Seregin, PP
    Kudoyarova, VK
    Kuznetsov, AN
    Terukov, EI
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (06) : 728 - 730