Investigation of the structure of damage layers in TEM samples prepared using a focused ion beam

被引：48

作者：

Rubanov, S ^{[1
]}

Munroe, PR ^{[1
]}

机构：

[1] Univ New S Wales, Electron Microscope Unit, Sydney, NSW 2052, Australia

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2001年 / 20卷 / 13期

关键词：

D O I：

10.1023/A:1010950201525

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structure of damage layers in transmission electron microscopy (TEM) samples was investigated using focused ion beam (FIB) system. The structural damage in silicon (Si) structures after fabrication of FIB sample and local recrystallization of amorphous Si in some regions of irradiated material was discussed. Damage layers present on both sides of prepared TEM specimens posed a serious problem for high-resolution electron microscopy. The damage layer on the specimen were found to be thicker than that obtained using conventional argon ion milling.

引用

页码：1181 / 1183

页数：3

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