NiO/ZnO light emitting diodes by solution-based growth

被引：102

作者：

Xi, Y. Y. ^{[1
]}

Hsu, Y. F. ^{[1
]}

Djurisic, A. B. ^{[1
]}

Ng, A. M. C. ^{[1
]}

Chan, W. K. ^{[2
]}

Tam, H. L. ^{[3
]}

Cheah, K. W. ^{[3
]}

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[2] Univ Hong Kong, Dept Chem, Hong Kong, Hong Kong, Peoples R China

[3] Hong Kong Baptist Univ, Dept Phys, Kowloon, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 11期

关键词：

D O I：

10.1063/1.2898505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heterojunction NiO/ZnO light emitting diodes have been fabricated using low temperature solution-based growth methods. While negligible light emission has been obtained for the as-grown NiO film, devices with annealed NiO film exhibit room-temperature electroluminescence (EL), which was attributed to the detrimental effects of nickel oxide hydroxide in as-grown NiO layers. The device performance can be further modified by insertion of the organic layers between NiO and ZnO and the EL spectra exhibited dependence on the bias voltage. For higher bias voltages, strong UV-violet emission peak can be obtained in spite of the dominance of defect emission in the photoluminescence spectra. (c) 2008 American Institute of Physics.

引用

页数：3

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