Preparation and characterization of silicon nanowire arrays for solar cell

被引：0
作者：
Yang, Wen-bin [1 ,2 ]
Wu, Jun [1 ,2 ]
Wei, Ming [3 ]
Wang, Chao [1 ,2 ]
Xie, Chang-qiong [1 ,2 ]
机构：
[1] Southwest Univ Sci & Technol, State Key Lab Cultivat Base Nonmetal Composite &, Mianyang 621010, Sichuan, Peoples R China
[2] Southwest Univ Sci & Technol, Sch Mat Sci & Engn, Sichuan 621010, Peoples R China
[3] Southwest China Univ Sci & Technol, Sch Life Sci & Engn, Sichuan 621010, Peoples R China
来源：
OPTOELECTRONIC MATERIALS, PTS 1AND 2 | 2010年 / 663-665卷
基金：
中国国家自然科学基金;
关键词：
Silicon nanowire arrays; Preparation; Characterization; Morphology; GROWTH;
D O I：
10.4028/www.scientific.net/MSF.663-665.840
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Large-area silicon nanowire arrays (SiNWs) were prepared by etching silicon substrate in HF/AgNO3 system solution at near room temperature. Morphology of SiNWs was characterized by scanning electron microscopy. The results showed that morphology of SiNWs could be influenced by solution ratio, temperature and reaction time in the hydrothermal system. The length of SiNWs was about 30-40 mu m, and the diameter of SiNWs was in the range of 100-300 nm. SiNWs owned strong optical absorption capacity and could be used for application in solar cell.
引用
收藏
页码：840 / +
页数：2
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