PROGRAM CHARGE EFFECT ON RANDOM TELEGRAPH NOISE BEHAVIOR IN MULTI-LEVEL FLOATING GATE FLASH MEMORY

被引：0
|
作者：
Yang, Xiaonan [1 ,2 ]
Huo, Zongliang [2 ]
Jin, Lei [2 ]
Wang, Zongyong [1 ]
Jiang, DanDan [2 ]
Wang, Yan [2 ]
Liu, Ming [2 ]
机构：
[1] Zhengzhou Univ, Sch Informat Engn, Zhengzhou 450001, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
来源：
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Program charge effect on random telegraph noise (RTN) behavior in multi-level floating gate (FG) memory is investigated. RTN can be observed in inversion region and accumulation region for low and high threshold voltage (V-th) states, respectively. As V-th increases, capture time tau(c) decreases and emission time tau(e) increases. The RTN is induced by deeper and higher energy level traps as V-th increases. A physical model is proposed to interpret the phenomena based on change of "trap detection window".
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