Chemical interaction and adhesion characteristics at the interface of metals (Cu, Ta) and low-k cyclohexane-based plasma polymer (CHexPP) films

被引:8
作者
Kim, KJ [1 ]
Kim, KS
Lee, NE
Choi, J
Jung, D
机构
[1] Sungkyunkwan Univ, Dept Mat Engn, Suwon 440746, Kyunggi Do, South Korea
[2] Sungkyunkwan Univ, Ctr Adv Plasma Surface Technol, Suwon 440746, Kyunggi Do, South Korea
[3] Sungkyunkwan Univ, Dept Phys, Suwon 440746, Kyunggi Do, South Korea
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2001年 / 19卷 / 04期
关键词
D O I
10.1116/1.1340658
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Chemical interaction and adhesion characteristics between metals (Cu, Ta) and low-k plasma-treated cyclohexane-based plasma polymer (CHexPP) films were studied. In order to generate new functional groups that may contribute to the improvement of adhesion between metal and plasma polymer. we performed O-2, N-2, and H-2/He mixture plasma treatment on the surfaces of CHexPP films. Chemical interactions at the interface between metals (Cu, Ta) and plasma-treated CHexPP films were analyzed by x-ray photoelectron spectroscopy. The effect of plasma treatment and thermal annealing on the adhesion characteristics was measured by a tape test and scratch test. The formation of new binding states on the surface of plasma-treated CHexPP films improved adhesion characteristics between metals and CHexPP films. Thermal annealing improves the adhesion property of Cu/CHexPP films, but degrades the adhesion property of Ta/CHexPP films. (C) 2001 American Vacuum Society.
引用
收藏
页码:1072 / 1077
页数:6
相关论文
共 20 条
[1]  
Bohr MT, 1996, SOLID STATE TECHNOL, V39, P105
[2]  
CHO JSH, 1993, P IEEE IEDM, P265
[3]   Photoluminescence and electroluminescence from polymer-like organic thin films deposited by plasma-enhanced chemical vapor deposition using para-xylene as precursor [J].
Jung, D ;
Pang, H ;
Park, JH ;
Park, YW ;
Son, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (1AB) :L84-L86
[4]   The interface formation and adhesion of metals (Cu, Ta, and Ti) and low dielectric constant polymer-like organic thin films deposited by plasma-enhanced chemical vapor deposition using para-xylene precursor [J].
Kim, KS ;
Jang, YC ;
Kim, HJ ;
Quan, YC ;
Choi, J ;
Jung, D ;
Lee, NE .
THIN SOLID FILMS, 2000, 377 :122-128
[5]   Kinetics of copper drift in PECVD dielectrics [J].
Loke, ALS ;
Ryu, C ;
Yue, CP ;
Cho, JSH ;
Wong, SS .
IEEE ELECTRON DEVICE LETTERS, 1996, 17 (12) :549-551
[6]  
MILTON O, 1992, MAT SCI THIN FILMS, P413
[7]   METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION OF COPPER USING HYDRATED COPPER FORMATE AS A NEW PRECURSOR [J].
MOUCHE, MJ ;
MERMET, JL ;
ROMAND, M ;
CHARBONNIER, M .
THIN SOLID FILMS, 1995, 262 (1-2) :1-6
[8]  
Murarka SP, 1996, SOLID STATE TECHNOL, V39, P83
[9]   COPPER METALLIZATION FOR ULSI AND BEYOND [J].
MURARKA, SP ;
HYMES, SW .
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1995, 20 (02) :87-124
[10]   AN XPS STUDY OF THE INSITU FORMATION OF THE POLYIMIDE COPPER INTERFACE [J].
PERTSIN, AJ ;
PASHUNIN, YM .
APPLIED SURFACE SCIENCE, 1991, 47 (02) :115-125