The influence of MWCVD process parameters on formation of SIC.

被引：0
作者：
Dul, K [1 ]
Jonas, S [1 ]
机构：
[1] Stanislaw Staszic Univ Min & Met, Fac Mat Sci & Ceram, PL-30059 Krakow, Poland
来源：
ANNALES DE CHIMIE-SCIENCE DES MATERIAUX | 2003年 / 28卷
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The SiC layers were deposited on Si (100) at the temperature by MicroWave Chemical Vapour Deposition (MWCVD) method. The polytype and the structural composition were investigated as a function chamber pressure, substrate temperature, methane, silane and hydrogen flow, MW power. The main methods of characterisation were X-Ray Diffraction (XRD), Fourier Transform Infra-Red Spectroscopy (FTIR) and Raman Spectroscopy.
引用
收藏
页码：S125 / S132
页数：8
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