Effects of polarization charge on the photovoltaic properties of InGaN solar cells

被引：92

作者：

Li, Z. Q. ^{[1
]}

Lestradet, M. ^{[1
]}

Xiao, Y. G. ^{[1
]}

Li, S. ^{[1
]}

机构：

[1] Crosslight Software Inc, Burnaby, BC V5C 6P8, Canada

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 04期

关键词：

device simulations; GaN; InGaN; photovoltaics; polarization charge; solar cells;

D O I：

10.1002/pssa.201026489

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of interface polarization charge on the photovoltaic characteristics of GaN/InGaN solar cells have been analyzed in detail using 2D drift-diffusion simulations. The polarization charge at the GaN/InGaN interface creates an electric field that forces carriers generated by light to drift in opposite direction needed for efficient collection and substantially reduces the short circuit current (I-sc) and open circuit voltage (V-oc). The polarization charge plays an important role in the photovoltaic properties of InGaN solar cells comparable to that of defects. For small interface charge, the potential barrier could increase the V-oc. (c) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：928 / 931

页数：4

共 19 条

[1]

[Anonymous], APSYS US MAN

[2] Finite element simulations of compositionally graded InGaN solar cells [J].