Quasi-3D Electro-Thermal Simulation of Integrated Transistor Structures, IC Chips and Packages

被引：0
|
作者：
Petrosyants, Konstantin O. [1 ,2 ]
Ryabov, Nikita I. [1 ]
机构：
[1] Natl Res Univ Higher Sch Econ, Moscow Inst Elect & Math, Dept Elect Engn, Moscow, Russia
[2] Russian Acad Sci, Inst Design Problems Microelect, Dept Analog Circuits Design Automat, Moscow, Russia
来源：
2016 INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS (SIBCON) | 2016年
关键词：
semiconductor devices; integrated transistor; inegrated circuits; IC chip; BGA; electrical field; thermal field; electro-thermal simulation; quasi-3D approach; POWER ICS;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
New quasi - 3D numerical model for combined electrical and thermal analysis of integrated transistor structures, IC chips and packages is presented. The general 3D heat transfer and electrical field problems are correctly transformed to the set of 2D equations for temperature and electrical potential distributions in different layers of the device. The complexity and CPU time of the electro-thermal analysis were many times reduced. The model details and results of electro-thermal simulation of different types of semiconductor devices and ICs are presented.
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页数：6
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