Development of epitaxial NbN/MgO/NbN-superconductor-insulator-superconductor mixers for operations over the Nb gap frequency

被引：32
作者：
Kawakami, A [1 ]
Uzawa, Y [1 ]
Wang, Z [1 ]
机构：
[1] KARC, Commun Res Lab, Nishi Ku, Kobe, Hyogo 6512492, Japan
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 19期
关键词：
D O I：
10.1063/1.1625431
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have developed fabrication processes for epitaxial NbN/MgO/NbN trilayers and epitaxial NbN/MgO/NbN tunnel junctions. We estimated the junction specific capacitances (C-S) for designing fully epitaxial NbN-superconductor-insulator-superconductor (SIS) mixers by using Fiske steps. Tunnel junctions measuring 40x3 and 20x3 mum(2) were fabricated, and Fiske steps caused by external magnetic fields were clearly observed in the I-V characteristics. The C-S was estimated as a function of the product of the normal-state resistance and the junction area (R(N)A), and they were 73-120 fF/mum(2) at 8800-90 Omega mum(2). We fabricated and tested a fully epitaxial NbN/MgO/NbN-SIS mixer. The mixer showed low-noise properties over the Nb gap frequency, and the lowest DSB receiver noise was 260 K at 795 GHz. (C) 2003 American Institute of Physics.
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页码：3954 / 3956
页数：3
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