GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate

被引：79

作者：

Kuwahara, Yousuke ^{[1
]}

Fujii, Takahiro ^{[1
]}

Sugiyama, Toru ^{[1
]}

Iida, Daisuke ^{[1
]}

Isobe, Yasuhiro ^{[1
]}

Fujiyama, Yasuharu ^{[1
]}

Morita, Yoshiki ^{[1
]}

Iwaya, Motoaki ^{[1
]}

Takeuchi, Tetsuya ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Akasaki, Isamu ^{[1
]}

Amano, Hiroshi ^{[2
,3
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

[2] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[3] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 02期

关键词：

QUALITY;

D O I：

10.1143/APEX.4.021001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-performance GaInN-based solar cells with high open-circuit voltage, high short-circuit current density, and good fill factor have been obtained using a combination of two different GaInN superlattice structures. The GaInN barrier thicknesses (3 and 0.6 nm) in both superlattice structures were optimized, resulting in a thick GaInN-based active layer with a low pit density in the device. The conversion efficiency is approximately 2.5% under a solar simulator of air mass 1.5G and an irradiation intensity of 155mW/cm(2). (C) 2011 The Japan Society of Applied Physics

引用

页数：3

共 12 条

[1] Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode [J].

Akasaki, Isamu ;

Amano, Hiroshi .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (12) :9001-9010

[2] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[3] InGaN/GaN multiple quantum well solar cells with long operating wavelengths [J].

Dahal, R. ;

Pantha, B. ;

Li, J. ;

Lin, J. Y. ;

Jiang, H. X. .

APPLIED PHYSICS LETTERS, 2009, 94 (06)

[4]

de Vos A., 1992, Endoreversible thermodynamics of solar energy conversion

[5] GaInN/GaN p-i-n light-emitting solar cells [J].

Fujiyama, Y. ;

Kuwahara, Y. ;

Iwaya, M. ;

Kamiyama, S. ;

Amano, H. ;

Akasaki, I. .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10, 2010, 7 (10) :2382-2385

[6] Equilibrium critical thickness for misfit dislocations in III-nitrides [J].

Holec, David ;

Zhang, Yucheng ;

Rao, D. V. Sridhara ;

Kappers, Menno J. ;

McAleese, Clifford ;

Humphreys, Colin J. .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (12)

[7] Nitride-based light-emitting solar cell [J].

Kuwahara, Y. ;

Fujiyama, Y. ;

Iwaya, M. ;

Kamiyama, S. ;

Amano, H. ;

Akasaki, I. .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8)

[8] Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate [J].

Kuwahara, Yosuke ;

Fujii, Takahiro ;

Fujiyama, Yasuharu ;

Sugiyama, Tohru ;

Iwaya, Motoaki ;

Takeuchi, Tetsuya ;

Kamiyama, Satoshi ;

Akasaki, Isamu ;

Amano, Hiroshi .

APPLIED PHYSICS EXPRESS, 2010, 3 (11)

[9] Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells [J].

Lai, K. Y. ;

Lin, G. J. ;

Lai, Y. -L. ;

Chen, Y. F. ;

He, J. H. .

APPLIED PHYSICS LETTERS, 2010, 96 (08)

[10] Generation of misfit dislocations by basal-plane slip in InGaN/GaN heterostructures [J].

Liu, R. ;

Mei, J. ;

Srinivasan, S. ;

Ponce, F. A. ;

Omiya, H. ;

Narukawa, Y. ;

Mukai, T. .

APPLIED PHYSICS LETTERS, 2006, 89 (20)

← 1 2 →