A 60-GHz millimeter-wave bandpass filter using 0.18-μm CMOS technology

被引：106

作者：

Hsu, Cheng-Ying ^{[1
]}

Chen, Chu-Yu ^{[2
]}

Chuang, Huey-Ru ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Comp & Commun Engn, Tainan 70101, Taiwan

[2] Natl Univ Tainan, Dept Elect Engn, Tainan 700, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 03期

关键词：

bandpass filter; complementary metal - oxide - semiconductor (CMOS); dual mode; millimeter-wave; RF integrated circuit (RFIC)-on-chip; ring resonator; 60; GHz;

D O I：

10.1109/LED.2007.915369

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents the design and implementation of a 60-GHz millimeter-wave RF-integrated-circuit-on-chip bandpass filter using a 0.18-mu m standard CMOS process. A planar ring resonator structure with dual-transmission zeros was adopted in the design of this CMOS filter. The die size of the chip is 1.148 x 1.49 mm(2). The investigations of sensitivity to the insertion loss and the passband bandwidth for different perturbation stub sizes are also studied. The filter has a 3-dB bandwidth of about 12 GHz at the center frequency of 64 GHz. The measured insertion loss of the passband is about 4.9 dB, and the return loss is better than 10 dB within the passband.

引用

页码：246 / 248

页数：3

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