Bipolar resistive switching of Ge2Sb2Te5 material

被引：1

作者：

Zhai Fengxiao ^{[1
]}

Hao Yunqi ^{[1
]}

Liu Nannan ^{[1
]}

Gao Xiaokai ^{[1
]}

Liu Sujuan ^{[1
]}

Yang Kun ^{[1
]}

机构：

[1] Zhengzhou Univ Light Ind, Coll Phys & Elect Engn, Zhengzhou 450002, Peoples R China

来源：

ELEVENTH INTERNATIONAL CONFERENCE ON INFORMATION OPTICS AND PHOTONICS (CIOP 2019) | 2019年 / 11209卷

基金：

中国国家自然科学基金;

关键词：

Bipolar switching; phase change; Ge2Sb2Te5; nonvolatile; memory; compliance current; endurance; HRS/LRS; THIN-FILMS; STORAGE;

D O I：

10.1117/12.2548815

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, the bipolar resistive switching properties of Ge2Sb2Te5 material are studied. By changing the voltage step, compliance current, cycle number and other parameters, the characteristics of the resistive switching voltage, switching ratio, switching polarity and cycle repetition of Ge2Sb2Te5 were tested. The experimental results show that the Ge2Sb2Te5 material film exhibit reversible and reproducible bi-stable resistive switching with lower threshold voltage. The reversible resistance switching between HRS and LRS was induced by bias amplitude and polarity. The electrical resistance ratio of HRS/LRS was similar to 80:1. After 100 test cycles, the ratio of high resistance state (HRS) and low resistance state (LRS) is not obviously changed, which indicates that the Ge2Sb2Te5 material has excellently nonvolatile bipolar resistance storage characteristics.

引用

页数：5

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