Electrical properties of nanocrystalline porous silicon

被引：1
|
作者：
Ciurea, ML [1 ]
Iancu, V [1 ]
机构：
[1] Natl Inst Mat Phys, R-76900 Bucharest, Romania
来源：
2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/SMICND.2000.890188
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Conduction properties as well as trapping phenomena in nanocrystalline porous silicon films are investigated in relation to their microstructure. Theoretical models to describe the phenomena are proposed. The main results presented in this paper are: the two-scale porosity of our porous silicon films, the decisive role of the quantum confinement to the conduction phenomena and the prominent part played by the oxidation on the surface effects.
引用
收藏
页码：55 / 64
页数：10
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