A 1-μW Radiation-Hard Front-End in a 0.18-μm CMOS Process for the MALTA2 Monolithic Sensor

被引：12

作者：

Piro, F. ^{[1
,2
]}

Allport, P. ^{[3
]}

Asensi, I. ^{[1
]}

Berdalovic, I. ^{[1
,4
]}

Bortoletto, D. ^{[5
]}

Buttar, C. ^{[6
]}

Cardella, R. ^{[1
,7
]}

Charbon, E. ^{[2
]}

Dachs, F. ^{[1
]}

Dao, V. ^{[1
]}

Dobrijevic, D. ^{[1
]}

Dyndal, M. ^{[1
]}

Flores, L. ^{[1
]}

Freeman, P. ^{[1
]}

Gabrielli, A. ^{[1
]}

Gonella, L. ^{[3
]}

Kugathasan, T. ^{[1
]}

LeBlanc, M. ^{[1
]}

Oyulmaz, K. ^{[8
]}

Pernegger, H. ^{[1
]}

Riedler, P. ^{[1
]}

van Rijnbach, M. ^{[1
]}

Sandaker, H. ^{[9
]}

Sharma, A. ^{[1
]}

Solans, C. ^{[1
]}

Snoeys, W. ^{[1
]}

Suligoj, T. ^{[4
]}

Torres, J. ^{[10
]}

Worm, S. ^{[11
]}

机构：

[1] CERN, Dept Expt Phys, CH-1211 Geneva, Switzerland

[2] Ecole Polytech Fed Lausanne, Adv Quantum Architecture Lab AQUA, CH-1015 Lausanne, Switzerland

[3] Univ Birmingham, Dept Phys & Astron, Birmingham B15 2TT, W Midlands, England

[4] Univ Zagreb, Fac Elect Engn & Comp, Zagreb 10000, Croatia

[5] Univ Oxford, Dept Particle Phys, Oxford OX1 2JD, England

[6] Univ Glasgow, Fac Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland

[7] Univ Geneva, Dept Nucl & Particle Phys, CH-1205 Geneva, Switzerland

[8] Abant Izzet Baysal Univ, Dept Phys, TR-14030 Bolu, Turkey

[9] Univ Oslo, Dept Phys, N-0315 Oslo, Norway

[10] Univ Valencia, Dept Elect Engn, Valencia 46010, Spain

[11] Deutsch Elektronen Synchrotron DESY, D-15738 Zeuthen, Germany

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2022年 / 69卷 / 06期

基金：

欧盟地平线“2020”;

关键词：

Front-end circuits; monolithic active pixel sensors (MAPSs); pixel detectors; radiation hardness; ACTIVE PIXEL SENSORS; DETECTORS;

D O I：

10.1109/TNS.2022.3170729

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, a low-power, radiation-hard front-end circuit for monolithic pixel sensors, designed to meet the requirements of low noise and low pixel-to-pixel variability, the key features to achieve high detection efficiencies, is presented. The sensor features a small collection electrode to achieve a small capacitance (<5 fF) and allows full CMOS in-pixel circuitry. The circuit is implemented in the 180-nm CMOS imaging technology from the TowerJazz foundry and integrated into the MALTA2 chip, which is part of a development that targets the specifications of the outer pixel layer of the ATLAS Inner Tracker upgrade at the LHC. One of the main challenges for monolithic sensors is a radiation hardness up to 10(15) 1-MeV n(eq)/cm(2) non-ionizing energy loss (NIEL) and 80 Mrad total ionizing dose (TID) required for this application. Tests up to 3 . 10(15) 1-MeV n(eq)/cm(2) and 100 Mrad were performed on the MALTA2 sensor and front-end circuit, which still show good performance even after these levels of irradiation, promising for even more demanding applications such as the future experiments at the high-luminosity large hadron collider (HL-LHC).

引用

页码：1299 / 1309

页数：11

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