Microstructure and Light-Scattering Properties of ZnO:Al Films Prepared Using a Two-Step Process through the Control of Oxygen Pressure

被引：22

作者：

Moon, Taeho ^{[1
]}

Yoon, Wonki ^{[1
]}

Ji, Kwang Sun ^{[1
]}

Ahn, Seh-Won ^{[1
]}

Lee, Sungeun ^{[1
]}

Joo, Minho ^{[1
]}

Shin, Hui Youn ^{[1
]}

Park, Kyuho ^{[1
]}

Lee, Heon-Min ^{[1
]}

机构：

[1] LG Elect, Devices & Mat Lab, Seoul 137724, South Korea

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 09期

关键词：

ZINC-OXIDE;

D O I：

10.1143/APEX.3.095801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO:Al films were prepared using a two-step process involving the control of oxygen pressure. The seed layers were deposited under various Ar to oxygen pressure ratios, and the bulk layers were prepared under pure Ar. The growth mode was systematically examined and clearly different microstructures were shown according to the deposition condition of the seed layer. With increase of oxygen pressure, the crystallinity and the degree of (002) texturing increased. The haze values of etched films also increased with increasing oxygen pressure, which was explained by the grain-structure of as-deposited films. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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