Structural Properties of Ultra-Thin Y2O3 Gate Dielectrics Studied by X-Ray Diffraction (XRD) and X-Ray Photoelectron Spectroscopy (XPS)

被引：0

作者：

Liu, Chuan-Hsi ^{[1
]}

Juan, Pi-Chun ^{[2
]}

Cheng, Chin-Pao ^{[1
]}

Lai, Guan-Ting ^{[1
]}

Lee, Huan ^{[1
]}

Chen, Yi-Kuan ^{[2
]}

Liu, Yu-Wei ^{[2
]}

Hsu, Chih-Wei ^{[2
]}

机构：

[1] Natl Taiwan Normal Univ, Dept Mechatron Technol, Taipei, Taiwan

[2] Ming Chi Univ Technol, Dept Mat Engn, Taoyuan, Taiwan

来源：

INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 | 2010年

关键词：

INTERFACIAL REACTIONS; FILMS; YTTRIUM;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultra-thin yttrium oxide (Y2O3) films (physical thickness of 7 nm) were deposited on p-Si substrates by RF sputtering for MOS applications. The structural properties of the Y2O3:i gate dielectrics were studied after RTA from 650 to 850 degrees C. The crystalline phase and chemical bonding state of the films were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. According to the XRD patterns, Y2O3 films remain amorphous after 850 degrees C annealing. Moreover, also confirmed by XPS results, the formation of yttrium silicates (YSiO) was observed after 650 degrees C annealing, and the silicate thickness increases with the annealing temperature. It is suggested that the thickness of the silicate layer YSiO dominates the gate leakage current of the MOS capacitors.

引用

页码：1256 / +

页数：2

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