MOVPE of GaInN heterostructures and quantum wells

被引：19

作者：

Scholz, F ^{[1
]}

Off, J

Sohmer, A

Syganow, V

Dornen, A

Ambacher, O

机构：

[1] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany

[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Munich, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

MOVPE; GaInN; quantum wells; photoluminescence; composition; interfaces;

D O I：

10.1016/S0022-0248(98)00146-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaInN layers play a key role in short wavelength optoelectronic devices for the visible spectrum. However, the epitaxial growth of In containing nitrides is more problematic than that of GaN and AlGaN. This requires a detailed understanding of the growth procedure and the material properties. We have grown GaInN heterostructures and quantum wells by low-pressure metalorganic vapour-phase epitaxy. They have been further analysed by X-ray diffraction, optical spectroscopy and atomic force microscopy. Our results indicate a strong difference in GaInN quality depending on the composition and thickness of the grown layers and the growth temperature. Possible reasons for these problems are shortly discussed. Besides thermodynamic limitations predicted for GaInN the mismatch induced strain to GaN may play a major role for these growth problems. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：8 / 12

页数：5

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