Eutectic Microstructure and Thermoelectric Properties of Mg2Sn

被引:27
作者
Chen, H. Y. [1 ]
Savvides, N. [1 ]
机构
[1] CSIRO Mat Sci & Engn, Sydney, NSW 2070, Australia
关键词
Eutectic microstructure; thermoelectric; Mg2Sn; SEMICONDUCTING PROPERTIES; THERMAL-CONDUCTIVITY; GE; DEPENDENCE;
D O I
10.1007/s11664-010-1150-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ingots of undoped and Ag-doped Mg2Sn were prepared from the melt using a rocking Bridgman furnace at different cooling rates: slow cooling (0.1 K/min), moderate cooling (1 K/min), and rapid quenching. The ingots show very different microstructure and thermoelectric properties. Slow-cooled ingots consist of large Mg2Sn crystals with minor inclusions. Moderate-cooled ingots show significant variation in composition and microstructure, with Mg-rich material at the topmost section of the ingot and Sn-rich material at the bottom surface of the ingot. Rapid quenching results in ingots with finely dispersed Mg + Mg2Sn eutectic microstructure in the form of lamellae 200 nm to 500 nm in thickness. Measurements of the Seebeck coefficient and electrical conductivity in the temperature range of T = 80 K to 700 K were carried out to establish correlations between the microstructure and the thermoelectric properties.
引用
收藏
页码:1792 / 1797
页数:6
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