Electronic And Ground State Properties of ThTe

被引:0
作者
Bhardwaj, Purvee [1 ]
Singh, Sadhna [1 ]
机构
[1] Barkatullah Univ, Dept Phys, High Pressure Res Lab, Bhopal 462026, MP, India
来源
INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2015) | 2016年 / 1728卷
关键词
HIGH-PRESSURE; PHASE-TRANSITION;
D O I
10.1063/1.4946201
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electronic properties of ThTe in cesium chloride (C sCI, B2) structure are investigated in the present paper. To study the ground state properties of thorium chalcogenide, the first principle calculations have been calculated. The bulk properties, including lattice constant, bulk modulus and its pressure derivative are obtained. The calculated equilibrium structural parameters are in good agreement with the available experimental and theoretical results.
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页数:4
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