Strongly enhanced superconductivity in doped monolayer MoS2 by strain

被引:38
|
作者
Zeng, Shuming
Zhao, Yinchang
Li, Geng
Ni, Jun [1 ]
机构
[1] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
TRANSITION-TEMPERATURE;
D O I
10.1103/PhysRevB.94.024501
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effects of strain on the stability, electron-phonon coupling, and superconductivity of doped monolayer MoS2 are investigated systematically using first-principles calculations. We find that most of the electron-phonon coupling in doped monolayer MoS2 is attributed to the in-plane vibrations of Mo atoms, which can be further tuned by strain. By applying biaxial compressive strain, we find a large enhancement in the superconducting transition temperature (T-c) and we obtain a T-c of 22 K at the optimal hole doping concentration, while the electron-phonon coupling of electron-doped structure is reduced due to the direct-indirect band-gap insulator transition. Our results reveal that the Fermi surface nesting-driven mechanism is mainly responsible for phonon softening and superconductivity in monolayer MoS2, suggesting that doping combined with strain is efficient at tuning electron-phonon coupling and superconductivity.
引用
收藏
页数:6
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