The effects of strain on the stability, electron-phonon coupling, and superconductivity of doped monolayer MoS2 are investigated systematically using first-principles calculations. We find that most of the electron-phonon coupling in doped monolayer MoS2 is attributed to the in-plane vibrations of Mo atoms, which can be further tuned by strain. By applying biaxial compressive strain, we find a large enhancement in the superconducting transition temperature (T-c) and we obtain a T-c of 22 K at the optimal hole doping concentration, while the electron-phonon coupling of electron-doped structure is reduced due to the direct-indirect band-gap insulator transition. Our results reveal that the Fermi surface nesting-driven mechanism is mainly responsible for phonon softening and superconductivity in monolayer MoS2, suggesting that doping combined with strain is efficient at tuning electron-phonon coupling and superconductivity.
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Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USAStanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
Datye, Isha M.
Daus, Alwin
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Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
Rhein Westfal TH Aachen, Chair Elect Dev, D-52074 Aachen, GermanyStanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
Daus, Alwin
Grady, Ryan W.
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Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USAStanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
Grady, Ryan W.
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Brenner, Kevin
Vaziri, Sam
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Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USAStanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
Vaziri, Sam
Pop, Eric
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Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Stanford Univ, Precourt Inst Energy, Stanford, CA 94305 USAStanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
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CSIC, Inst Ciencia Mat Madrid, Madrid 28049, SpainCSIC, Inst Ciencia Mat Madrid, Madrid 28049, Spain
Roldan, R.
Cappelluti, E.
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CSIC, Inst Ciencia Mat Madrid, Madrid 28049, Spain
CNR, UOS Sapienza, Ist Sistemi Complessi, I-00185 Rome, ItalyCSIC, Inst Ciencia Mat Madrid, Madrid 28049, Spain
Cappelluti, E.
Guinea, F.
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CSIC, Inst Ciencia Mat Madrid, Madrid 28049, SpainCSIC, Inst Ciencia Mat Madrid, Madrid 28049, Spain