The influence of K4Fe(CN)6 on the photosensitivity of cubic AgCl microcrystal

被引:0
作者
Li, XW [1 ]
Liu, RJ [1 ]
Geng, AC [1 ]
Yang, SP [1 ]
Fu, GS [1 ]
机构
[1] Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China
来源
CHINESE PHYSICS | 2005年 / 14卷 / 02期
关键词
shallow electron trap; photosensitivity; trap depth; doping concentration; capture cross section;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The influence of K4Fe(CN)(6), at various doping concentrations on the photosensitivity of cubic AgCl microcrystals has been investigated by using the microwave absorption and phase-sensitive measurement technique. The time behaviour of free photoelectrons in AgCl microcrystals is analysed by using computer simulation as a function of three parameters of shallow electron trap (SET) including doping concentration, trap depth and capture cross-section (CCS). It is found that the three parameters of SET play different roles on the free photoelectron decay time (FDT). After considering the threshold effects of the three parameters and their collective effects, the trap depth value, the CCS value, and the optimal doping concentration of the SET introduced by the dopant K4Fe(CN)(6) in cubic AgCl microcrystals can also be determined, and the best photosensitivity of cubic AgCl can be obtained.
引用
收藏
页码:404 / 408
页数:5
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