A microwave power sensor based on GaAs MMIC technology

被引：26
作者：
Han, Lei [1 ]
Huang, Qing-An [1 ]
Liao, Xiao-Ping [1 ]
机构：
[1] SE Univ, Key Lab MEMS, Minist Educ, Nanjing 210096, Peoples R China
来源：
JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2007年 / 17卷 / 10期
关键词：
D O I：
10.1088/0960-1317/17/10/027
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel structure for measuring the power of microwave signals is presented. It measures the microwave power coupled from the CPW line by a MEMS membrane. In this method, the signal is available during the power detection. The fabrication of the power sensor is compatible with the GaAs MMIC process. The design, fabrication and experimental results of this sensor are given. The experimental results show that the sensor has a reflection of less than -15 dB and insertion loss of less than 2.0 dB up to 12 GHz. The total sensitivity of such a power sensor is 10.4 mu V mW(-1) at 10 GHz frequency.
引用
收藏
页码：2132 / 2137
页数：6
相关论文
共 17 条
[11]   High-isolation CPW MEMS shunt switches - Part 1: Modeling [J].
Muldavin, JB ;
Rebeiz, GM .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2000, 48 (06) :1045-1052
[12]  
Rebeiz G. M., 2003, RF MEMS THEORY DESIG
[13]   K-band capacitive MEMS-switches [J].
Ulm, M ;
Walter, T ;
Mueller-Fiedler, R ;
Voigtlaender, K ;
Kasper, E .
2000 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2000, :119-122
[14]  
Vaha-Heikkila T., 2003, Proceedings of 3rd ESA Workshop on Millimetre Wave Technology and Applications: Circuits, Systems, and Measurement Techniques (ESA-WPP-212), P503
[15]  
VAHAHEIKKILA T, 2002, P 3 WORKSH MEMS MILL, P336
[16]   Physical modeling of spiral inductors on silicon [J].
Yue, CP ;
Wong, SS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (03) :560-568
[17]   MEMS membrane switches on GaAs substrates for x-band applications [J].
Zheng, WB ;
Huang, QA ;
Liao, XP ;
Li, FX .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2005, 14 (03) :464-471
12